JFETs - Distributor elektronischer Komponenten - Seite 267

Hersteller

Panasonic Electronic Components

National Semiconductor

Renesas Electronics Corporation

Diodes Incorporated

Microchip Technology

Toshiba Semiconductor and Storage

Microsemi Corporation

Texas Instruments

Infineon Technologies

Central Semiconductor Corp

Nisshinbo Micro Devices Inc.

Rochester Electronics, LLC

Qorvo

NTE Electronics, Inc

Solid State Inc.

Linear Integrated Systems, Inc.

InterFET

NTE Electronics, Inc

Intersil

Precision Monolithics

Harris Corporation

Fairchild Semiconductor

NEC Corporation

Sanyo

Linear Technology

Advanced Micro Devices

Burr Brown

Motorola

Empfohlene Produkte

267 / 268 Seite，Insgesamt 3207 Ergebnisse Vorherige | Nächster

Teilenummer	Hersteller	Beschreibung	Auf Lager	Menge	Verpackung	Produktstatus	Details
SMP4221TR	InterFET	JFET N-Channel -30V Low Ciss	3642	RFQ	Tape & Reel (TR)	Active	Details
SMP5461	InterFET	JFET P-Channel 40V Low Ciss	3181	RFQ	Strip	Active	Details
SMP4220ATR	InterFET	JFET N-Channel -30V Low Ciss	8546	RFQ	Tape & Reel (TR)	Active	Details
SMP4339TR	InterFET	JFET N-Channel -50V Low Ciss	7651	RFQ	Tape & Reel (TR)	Active	Details
SMP4339	InterFET	JFET N-Channel -50V Low Ciss	2717	RFQ	Strip	Active	Details
SMP4393TR	InterFET	JFET N-Channel -40V Low Noise	1564	RFQ	Tape & Reel (TR)	Active	Details
SMP5462TR	InterFET	JFET P-Channel 40V Low Ciss	3103	RFQ	Tape & Reel (TR)	Active	Details
SMP4221	InterFET	JFET N-Channel -30V Low Ciss	1622	RFQ	Strip	Active	Details
SMP4221A	InterFET	JFET N-Channel -30V Low Ciss	4467	RFQ	Strip	Active	Details
SMP4393	InterFET	JFET N-Channel -40V Low Noise	9975	RFQ	Strip	Active	Details
SMP4221ATR	InterFET	JFET N-Channel -30V Low Ciss	5353	RFQ	Tape & Reel (TR)	Active	Details
IFN202ST3	InterFET	JFET N-Channel -40V Low Ciss	2657	RFQ	Strip	Active	Details

267 / 268 Seite，Insgesamt 3207 Ergebnisse

JFETs

Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.